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CBR2-D100S fiches techniques PDF

Central Semiconductor - SURFACE MOUNT SILICON 2.0 AMP BRIDGE RECTIFIERS

Numéro de référence CBR2-D100S
Description SURFACE MOUNT SILICON 2.0 AMP BRIDGE RECTIFIERS
Fabricant Central Semiconductor 
Logo Central Semiconductor 





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CBR2-D100S fiche technique
CBR2-D020S SERIES
SURFACE MOUNT SILICON
2.0 AMP
BRIDGE RECTIFIERS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR2-D020S series
types are silicon full wave bridge rectifiers mounted in a
durable epoxy surface mount molded case, utilizing glass
passivated chips.
SMDIP CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
CBR2-
SYMBOL D020S
Peak Repetitive Reverse Voltage
VRRM
200
DC Blocking Voltage
VR 200
RMS Reverse Voltage
VR(RMS)
140
Average Forward Current (TA=40°C)
IO
Peak Forward Surge Current (t=8.3ms) IFSM
Peak Forward Surge Current (t=1.0ms) IFSM
Rating for Fusing (t=8.3ms)
I2t
Operating and Storage
Junction Temperature
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance
TJ, Tstg
JA
JL
CBR2-
D040S
400
400
280
CBR2-
D060S
600
600
420
2.0
50
65
10
CBR2-
D080S
800
800
560
CBR2-
D100S
1000
1000
700
-65 to +150
40
15
UNITS
V
V
V
A
A
A
A2s
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
MAX
UNITS
IR VR=Rated VRRM
5.0 μA
IR VR=Rated VRRM, TA=125°C
0.5 mA
VF IF=2.0A
1.1 V
CJ VR=4.0V, f=1.0MHz
Notes: (1) Device mounted on PCB with 13mm x 13mm copper pads.
25
pF
R1 (23-June 2015)

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