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Numéro de référence | RCR1525SI | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | RCR | ||
Logo | |||
RCR1525SI
P-Channel Enhancement Mode Field Effect Transistor
z Features
VDS (V) = -30 V
ID = -3.5 A
RDS(ON) = 75mΩ @VGS = -10V
RDS(ON) = 90mΩ @VGS = -4.5V
High density cell design for low RDS(ON).
z General Description
This P-Channel enhancement mode power FETs are
produced with high cell density, DMOS trench technology,
which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application
such as portable equipment, power management and other
battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
z Pin Configuration
z Package Information
D
3
12
GS
z Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed(1)
Power Dissipation
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ,TSTG
Ratings
-30
±20
-3.5
-16
1
-55 to 150
Unit
V
V
A
W
℃
YKKJPD-V3.1
1/4
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Pages | Pages 4 | ||
Télécharger | [ RCR1525SI ] |
No | Description détaillée | Fabricant |
RCR1525SI | P-Channel Enhancement Mode Field Effect Transistor | RCR |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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