DataSheetWiki


RCR1525SI fiches techniques PDF

RCR - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence RCR1525SI
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant RCR 
Logo RCR 





1 Page

No Preview Available !





RCR1525SI fiche technique
RCR1525SI
P-Channel Enhancement Mode Field Effect Transistor
z Features
VDS (V) = -30 V
ID = -3.5 A
RDS(ON) = 75mΩ @VGS = -10V
RDS(ON) = 90mΩ @VGS = -4.5V
High density cell design for low RDS(ON).
z General Description
This P-Channel enhancement mode power FETs are
produced with high cell density, DMOS trench technology,
which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application
such as portable equipment, power management and other
battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
z Pin Configuration
z Package Information
D
3
12
GS
z Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed(1)
Power Dissipation
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ,TSTG
Ratings
-30
±20
-3.5
-16
1
-55 to 150
Unit
V
V
A
W
YKKJPD-V3.1
1/4

PagesPages 4
Télécharger [ RCR1525SI ]


Fiche technique recommandé

No Description détaillée Fabricant
RCR1525SI P-Channel Enhancement Mode Field Effect Transistor RCR
RCR

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche