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S-LP3415ELT1G fiches techniques PDF

LRC - P-Channel Enhancement-Mode MOSFET

Numéro de référence S-LP3415ELT1G
Description P-Channel Enhancement-Mode MOSFET
Fabricant LRC 
Logo LRC 





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S-LP3415ELT1G fiche technique
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V
RDS(ON), [email protected], Ids@-4A = 60 mΩ
RDS(ON), [email protected], Ids@-4A = 75 mΩ
RDS(ON), [email protected], Ids@-2A = 85 mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
we declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Ordering Information
Device
LP3415ELT1G
S-LP3415ELT1G
LP3415ELT3G
S-LP3415ELT3G
Marking
P15
P15
Shipping
3000/Tape& Reel
10000/Tape& Reel
LP3415ELT1G
S-LP3415ELT1G
3
1
2
SOT– 23 (TO–236AB)
3
1
2
Maximum Ratings and Thermal Characteristics (TA= 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
TA = 25oC
TA = 75oC
IDM
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
RqJC
RqJA
Limit
-20
±8
-4
-30
1
0.6
-55 to 150
100
150
Unit
V
A
W
oC
oC/W
Rev .O 1/3

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