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Numéro de référence | FS5ASJ-06F | ||
Description | N-channel Power MOS FET | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
FS5ASJ-06F
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 4 V
• VDSS : 60 V
• rDS(ON) (max) : 140 mΩ
• ID : 5 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
2, 4
4
12 3
1
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulse)
Avalanche current (Pulse)
Source current
Source current (Pulse)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Ratings
60
±20
5
20
5
5
20
15
– 55 to +150
– 55 to +150
0.32
REJ03G0239-0200
Rev.2.00
Dec 19, 2008
1. Gate
2. Drain
3. Source
4. Drain
Unit
V
V
A
A
A
A
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
Typical value
REJ03G0239-0200 Rev.2.00 Dec 19, 2008
Page 1 of 6
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Pages | Pages 7 | ||
Télécharger | [ FS5ASJ-06F ] |
No | Description détaillée | Fabricant |
FS5ASJ-06 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
FS5ASJ-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
FS5ASJ-06F | N-channel Power MOS FET | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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