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FS5ASJ-06F fiches techniques PDF

Renesas - N-channel Power MOS FET

Numéro de référence FS5ASJ-06F
Description N-channel Power MOS FET
Fabricant Renesas 
Logo Renesas 





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FS5ASJ-06F fiche technique
FS5ASJ-06F
High-Speed Switching Use
Nch Power MOS FET
Features
Drive voltage : 4 V
VDSS : 60 V
rDS(ON) (max) : 140 m
ID : 5 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
2, 4
4
12 3
1
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulse)
Avalanche current (Pulse)
Source current
Source current (Pulse)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Ratings
60
±20
5
20
5
5
20
15
– 55 to +150
– 55 to +150
0.32
REJ03G0239-0200
Rev.2.00
Dec 19, 2008
1. Gate
2. Drain
3. Source
4. Drain
Unit
V
V
A
A
A
A
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
Typical value
REJ03G0239-0200 Rev.2.00 Dec 19, 2008
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