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Numéro de référence | LN4812LT1G | ||
Description | N-Channel Enhancement-Mode MOSFET | ||
Fabricant | LRC | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@6 A = 38mΩ
RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current Handling Capability
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LN4812LT1G
S-LN4812LT1G
LN4812LT3G
S-LN4812LT3G
Marking
N48
N48
Shipping
3000/Tape&Reel
10000/Tape&Reel
LN4812LT1G
S-LN4812LT1G
3
1
2
SOT– 23 (TO–236AB)
N - Channel
3
1
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1)
PD Maximum Power Dissipation
TA = 25oC
TA = 75oC
30
± 20
6
30
1.4
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
RθJC Junction-to-Case Thermal Resistance
RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
-55 to 150
50
90
Unit
V
A
W
oC
oC/W
Rev .O 1/4
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Pages | Pages 4 | ||
Télécharger | [ LN4812LT1G ] |
No | Description détaillée | Fabricant |
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