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Vishay - Glass Passivated Junction Fast Switching Rectifier

Numéro de référence RGP30D
Description Glass Passivated Junction Fast Switching Rectifier
Fabricant Vishay 
Logo Vishay 





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RGP30D fiche technique
RGP30A thru RGP30M
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
SUPERECTIFIER®
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V to 1000 V
IFSM
125 A
VF 1.3 V
IR 5.0 μA
TJ max.
175 °C
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.2 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100 200 400 600 800 1000 V
Maximum RMS voltage
VRMS
35
70 140 280 420 560 700 V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV)
3.0 A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
IFSM
125 A
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length at TA = 55 °C
Operating junction and
storage temperature range
IR(AV)
TJ, TSTG
100
- 65 to + 175
μA
°C
Document Number: 88704 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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