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TGS - Silicon Bidirectional Triode Thyristors

Numéro de référence STN1A60
Description Silicon Bidirectional Triode Thyristors
Fabricant TGS 
Logo TGS 





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STN1A60 fiche technique
TIGER ELECTRONIC CO.,LTD
Silicon Bidirectional Triode Thyristors
GENERAL DESCRIPTION
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO - 92 package which is readily adaptable for use in
automatic insertion equipment.
STN1A60/80
Parameter
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
Symbol Typ Unit
STN1A60 STN1A80
VVDRRRMM 600 800 V
IT(RMS) 1.0 A
ITSM 10 A
Tj 110 oC
Tstg
-45~150
oC
Parameter
Symbol Test Conditions
Repetitive peak off-state voltage
s
RMS on-state current
On-state voltage
Holding current
T2+G+
Gate trigger
current
T2+G-
T2-G-
T2-G+
Gate trigger voltage
VVDRRRMM
IT(RMS)
VT
IH
all conduction angles
IT=1.5 A
VD =12 V; IGT=10 mA
IGT VD =6.0 V; RL= 10Ω
VGT VD =6.0 V; RL= 10Ω
Min Typ Max Unit
STN1A60 STN1A80
600 800 V
1.0 A
— — 1.60 V
——
5 mA
— — 5.0
— — 5.0 mA
— — 5.0
— — 12
0.5 1.8 V

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