(PDF) STN1A80 Datasheet - Silicon Bidirectional Triode Thyristors

Número de pieza	STN1A80
Descripción	Silicon Bidirectional Triode Thyristors
Fabricantes	TGS
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No Preview Available ! TIGER ELECTRONIC CO.,LTD Silicon Bidirectional Triode Thyristors GENERAL DESCRIPTION Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO - 92 package which is readily adaptable for use in automatic insertion equipment. STN1A60/80 Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature Symbol Typ Unit STN1A60 STN1A80 VVDRRRMM 600 800 V IT(RMS) 1.0 A ITSM 10 A Tj 110 oC Tstg -45~150 oC Parameter Symbol Test Conditions Repetitive peak off-state voltage s RMS on-state current On-state voltage Holding current T2+G+ Gate trigger current T2+G- T2-G- T2-G+ Gate trigger voltage VVDRRRMM IT(RMS) VT IH all conduction angles IT=1.5 A VD =12 V; IGT=10 mA IGT VD =6.0 V; RL= 10Ω VGT VD =6.0 V; RL= 10Ω Min Typ Max Unit STN1A60 STN1A80 — 600 800 — V — 1.0 — A — — 1.60 V —— 5 mA — — 5.0 — — 5.0 mA — — 5.0 — — 12 — 0.5 1.8 V 1 page

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PDF STN1A80 Data sheet ( Hoja de datos )