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Numéro de référence | 2SD882 | ||
Description | NPN Silicon Power Transistor | ||
Fabricant | Kexin | ||
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1 Page
SMD Type
NPN Silicon Power Transistor
2SD882
Transistors
Features
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ
Tstg
Rating
40
30
6
3
0.5
150
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Testconditons
Ic=100uA ,IE=0
IC= 10 mA , IB=0
IE= 100 uA ,IC=0
VCB=40 V , IE=0
VCE=30 V , IB=0
VEB=6V , IC=0
VCE= 2V, IC= 1A
VCE=2V, IC= 100mA
IC=2A, IB= 0.2A
IC=2A, IB= 0.2A
VCE=5 V, IC=0.1mA,f = 10MHz
hFE Classification
Rank
hFE
R
60 120
O
100 200
P
160 320
E
200 400
Min Typ Max Unit
40 V
30 V
6V
1 uA
10 uA
1 uA
60 400
32
0.5 V
1.5 V
50 MHz
www.kexin.com.cn 1
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Pages | Pages 1 | ||
Télécharger | [ 2SD882 ] |
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