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PDF STGB30V60DF Data sheet ( Hoja de datos )

Número de pieza STGB30V60DF
Descripción Trench gate field-stop IGBT
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STGB30V60DF Hoja de datos, Descripción, Manual

STGB30V60DF, STGP30V60DF,
STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet - production data
TAB
3
1
D²PAK
TAB
3
2
1
TO-220
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2, TAB)
Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 30 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
G (1) Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
E (3) between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order codes
STGB30V60DF
STGP30V60DF
STGW30V60DF
STGWT30V60DF
Table 1. Device summary
Marking
Package
GB30V60DF
GP30V60DF
GW30V60DF
GWT30V60DF
D²PAK
TO-220
TO-247
TO-3P
Packaging
Tape and reel
Tube
Tube
Tube
October 2013
This is information on a product in full production.
DocID024361 Rev 4
1/22
www.st.com
22

1 page




STGB30V60DF pdf
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
Ptot
(W)
AM17409v1
IC (A)
AM17410v1
250 60
50
200
40
150
30
100
20
50 10
0
0 25 50 75 100 125 150 175 TC(°C)
0
0 25 50 75 100 125 150 175 TC(°C)
Figure 4. Output characteristics (TJ=25°C)
IC (A)
AM17411v1
120
VGE=15V
13V
100 11V
Figure 5. Output characteristics (TJ=175°C)
IC (A)
AM17412v1
120 VGE=15V
100 13V
80 80 11V
60 60
9V
40
9V
40
20
0
0 1 2 3 4 VCE(V)
20
7V
0
0 1 2 3 4 VCE(V)
Figure 6. VCE(sat) vs. junction temperature
VCE(sat) (V)
3.2
VGE=15V
IC=60A
AM17413v1
3.0
2.8
2.6
2.4 IC=30A
2.2
2.0
1.8 IC=15A
1.6
1.4
1.2
-50 0 50 100 150 TC(°C)
Figure 7. VCE(sat) vs. collector current
VCE(sat) (V)
3.2
3.0
VGE=15V
Tj=175°C
AM17414v1
2.8
2.6
2.4 Tj=25°C
2.2
2.0
1.8
1.6 Tj=-40°C
1.4
1.2
1.0
0.8
0
10 20 30 40 50 60 IC(A)
DocID024361 Rev 4
5/22

5 Page





STGB30V60DF arduino
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Table 8. D²PAK (TO-263) mechanical data
mm
Min.
Typ.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
2.54
4.88
15
2.49
2.29
1.27
1.30
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
DocID024361 Rev 4
11/22

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