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Peregrine Semiconductor - Broadband Quad MOSFET Array

Numéro de référence PE4141
Description Broadband Quad MOSFET Array
Fabricant Peregrine Semiconductor 
Logo Peregrine Semiconductor 





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PE4141 fiche technique
Product Description
The PE4141 is an ultra-high linearity passive broadband
Quad MOSFET array with high dynamic range performance
capable of operation up to 1.0 GHz. This quad array
operates with differential signals at all ports (RF, LO, IF),
allowing an analog multiplexer to be built that uses LO ports
as digital controls, RF and IF port as single-ended or
differential inputs/outputs. The PE4141 switches the
differential input to the differential output at the LO switching
rate. Packaged in an 8-lead MSOP package, the PE4141 is
ideal for highly magnetic environments such as Magnetic
Resonance Imaging (MRI).
The PE4141 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Figure 1. Functional Diagram
LO2
LO1
RF1
RF2
IF1
IF2
Product Specification
PE4141
Ultra-linear UltraCMOS™
Broadband Quad MOSFET Array
Features
 Ultimate Quad MOSFET array
 Very high linearity
 Low magnetic
 Ideal for mixer applications
 Up/down conversion
 Low conversion loss
 High LO Isolation
 8-lead MSOP package ideal for
magnetic environments
Applications
The PE4141 is ideally suited for
broadband analog multiplexer design in:
 Medical instrumentation
 Magnetic Resonance Imaging (MRI)
 Data acquisition and ADC/DAC
muxing
 RF modulation/demodulation
 Precision instrumentation
 Analog or digital video switch matrices
Figure 2. Package Type
8-lead MSOP
Table 1. AC and DC Electrical Specifications @ +25 °C
Symbol
Characteristics
Test Conditions
Min Typ Max Units
FTYP
Operating Frequency Range1
DC 1.0 GHz
VDS Drain-Source Voltage
VGS = +3V, IDS = 40 mA
260 320 380 mV
VDS Match
Drain-Source Voltage Match
12 40 mV
VT Threshold Voltage
VDS = 0.1V; per ASTM F617-00
-100
mV
R DS
Drain-Source ‘ON’ Resistance
VGS = +3V, IDS = 40 mA
6.5 7.75 9.5
Note: 1. Typical untested operating frequency range of Quad MOSFET transistors.
Document No. 70-0268-04 www.psemi.com
©2010-11 Peregrine Semiconductor Corp. All rights reserved.
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