DataSheetWiki


RS1ML fiches techniques PDF

Taiwan Semiconductor - Surface Mount Fast Recovery Rectifiers

Numéro de référence RS1ML
Description Surface Mount Fast Recovery Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





1 Page

No Preview Available !





RS1ML fiche technique
CREAT BY ART
Surface Mount Fast Recovery Rectifiers
RS1AL thru RS1ML
Taiwan Semiconductor
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
RS1 RS1 RS1 RS1 RS1 RS1
SYMBOL
AL BL DL GL JL KL
Marking code
RAL RBL RDL RGL RJL RKL
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600 800
Maximum RMS voltage
VRMS
35 70 140 280 420 560
Maximum DC blocking voltage
VDC 50 100 200 400 600 800
Maximum average forward rectified current
IF(AV)
0.8
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
RS1
ML
RML
1000
700
1000
Maximum instantaneous forward voltage (Note 1)
@ 0.8 A
VF
1.3
Maximum reverse current @ rated VR TJ=25
TJ=125
IR
Typical junction capacitance (Note 2)
Cj
Maximum reverse recovery time (Note 3)
Trr
Typical thermal resistance
RθjL
RθjA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
TJ
TSTG
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
5
50
10
150 250
32
105
- 55 to +150
- 55 to +150
500
UNIT
V
V
V
A
A
V
μA
pF
ns
OC/W
OC
OC
Document Number: DS_D1405034
Version: K14

PagesPages 4
Télécharger [ RS1ML ]


Fiche technique recommandé

No Description détaillée Fabricant
RS1M SMA fast soft-recovery controlled avalanche rectifiers NXP Semiconductors
NXP Semiconductors
RS1M 1.0 Ampere Fast Recovery Rectifiers Fairchild Semiconductor
Fairchild Semiconductor
RS1M 1 AMP SURFACE MOUNT GLASS FAST RECOVERY RECTIFIER Fuji Electric
Fuji Electric
RS1M 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Diodes Incorporated
Diodes Incorporated

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche