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SR1100 fiches techniques PDF

Kexin - Schottky Diodes

Numéro de référence SR1100
Description Schottky Diodes
Fabricant Kexin 
Logo Kexin 





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SR1100 fiche technique
DIP Type
Features
Schottky Barrier Chip
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
Schottky Diodes
SR120 ~ SR1100
DO-41
0.107 (2.7)
0.080 (2.0)
DIA.
Diodes
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol SR120 SR130 SR140 SR150 SR160 SR180 SR1100 Unit
Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM 20 30 40 50 60 80 100
Maximum DC Blocking Voltage
VDC
V
RMS Reverse Voltag
VR(RMS)
14
21
28
35
42
56
70
Forward Voltage
VF 0.5
0.7 0.85
Average Rectified Output Current @ TL=100
IO
1
A
Peak Forward Surge Current @ 8.3mS
IFSM
40
Maximum DC Reverse Current Ta=25
Ta=100
IR
0.5
mA
10
Typical Junction Capacitance (Note.1)
Cj
110
80 pF
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
RthJA
RthJL
50
/W
15
Junction Temperature
Storage Temperature
Tj
Tstg
150
-65 to 150
Note.1 Measured at 1MHz and applied reverse voltage of 4V D.C
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