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PDF MM60F120B Data sheet ( Hoja de datos )

Número de pieza MM60F120B
Descripción SwitchMode Single Fast Recovery Epitaxial Diode
Fabricantes Thinki Semiconductor 
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No Preview Available ! MM60F120B Hoja de datos, Descripción, Manual

MM60F120B
®
MM60F120B
Pb
Pb Free Plating Product
60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247-2L
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
MM60F120B using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C
TC=110°C
TJ=45°C, t=10ms, 50Hz, Sine
RecommendedM3
1200
1200
60
84
500
312
-40 to +150
-40 to +150
1.1
V
V
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
0.4 °C /W
Weight
6.0 g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=1200V
VR=1200V, TJ=125°C
-- -- 500 µA
-- --
5 mA
VF Forward Voltage
I F =60A
IF=60A, TJ=125°C
-- 2.10 --
-- 1.75
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 40 --
ns
trr Reverse Recovery Time
VR=600V, IF=60A
-- 90 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 7.5 --
A
trr Reverse Recovery Time
VR=600V, IF=60A
-- 320 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 14 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/

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