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Thinki Semiconductor - Common Cathode Fast Recovery Epitaxial Diode

Numéro de référence MM60FU030PC
Description Common Cathode Fast Recovery Epitaxial Diode
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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MM60FU030PC fiche technique
MM60FU030PC
®
MM60FU030PC
Pb
Pb Free Plating Product
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3PB/TO-3PN
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
MM60FU030PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR Maximum D.C. Reverse Voltage
300 V
VRRM
Maximum Repetitive Reverse Voltage
300 V
IF(AV)
Average Forward Current
TC=110°C, Per Diode
TC=110°C, Per Package
30 A
60 A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Surge Forward Current
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
42
480
A
A
PD Power Dissipation
156 W
TJ Junction Temperature
-55to +150
°C
TSTG
Torque
Storage Temperature Range
Module-to-Sink
RecommendedM3
-55 to +150
1.1
°C
N·m
Rth(J-C) Thermal Resistance
Junction-to-Case, Per Diode
0.8 °C /W
Weight
6g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
IRM Reverse Leakage Current
VF Forward Voltage
Test Conditions
VR=300V
VR=300V, TJ=125°C
IF=30A
IF=30A, TJ=125°C
Min. Typ. Max.
-- -- 10
-- -- 10
-- 1.25 1.8
-- 1.12 --
Unit
µA
mA
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=150V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 35 --
-- 2.5 --
ns
A
trr Reverse Recovery Time
VR=150V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 70 --
-- 6.8 --
ns
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/

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