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Numéro de référence | MMBT3904W | ||
Description | General Purpose Transistor | ||
Fabricant | WEITRON | ||
Logo | |||
1 Page
General Purpose Transistor
NPN Silicon
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT3904W
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-323(SC-70)
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R qJA
TJ,Tstg
Max
150
833
-55 to +150
Unit
mW
C/W
C
Device Marking
MMBT3904W=AM
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min Max Unit
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)
V(BR)EBO
Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc)
IBL
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)
ICEX
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width <=300uS, Duty Cycle <= 2.0%
6.0
-
-
-
50
50
Vdc
nAdc
nAdc
WEITRON
http://www.weitron.com.tw
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Pages | Pages 7 | ||
Télécharger | [ MMBT3904W ] |
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