PDF MMBT3904W Data sheet ( Hoja de datos )

Número de pieza	MMBT3904W
Descripción	General Purpose Transistor
Fabricantes	SeCoS
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No Preview Available ! Elektronische Bauelemente MMBT3904W NPN Silicon General Purpose Transistor FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Epitaxial Planar Die Construction · Complementary PNP Type Available (MMBT3906W) · Ideal for Medium Power Amplification and Switching COLLECTOR 3 3 A L 3 Top View 12 BS VG 1 BASE 2 EMITTER 1 2 SC-70 SOT-323 D MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Symbol PD Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C RqJA PD Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3904W = 1A, K2N RqJA TJ, Tstg C H K Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc Max 200 1.6 625 300 2.4 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C SOT-323(SC-70) Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 J L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO 40 — Vdc V(BR)CBO 60 — Vdc V(BR)EBO 6.0 — Vdc IBL — 50 nAdc ICEX — 50 nAdc REM : Thermal Clad is a registered trademark of the Berquist Company. http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B Any changing of specification will not be informed individual Page 1 of 6 1 page Elektronische Bauelemente MMBT3904W NPN Silicon General Purpose Transistor 300 200 100 70 50 30 0.1 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 50 20 10 5 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) Figure 11. Current Gain 5.0 10 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, Collector Current (mA) Figure 12. Output Admittance 10 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, Collector Current (mA) 5.0 Figure 13. Input Impedance 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 Figure 14. Voltage Feedback Ratio 10 TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C 1.0 +25°C 0.7 0.5 – 55°C 0.3 0.2 VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 http://www.SeCoSGmbH.com 01-Jun-2007 Rev. B 2.0 3.0 5.0 7.0 10 IC, Collector Current (mA) Figure 15. DC Current Gain 20 30 50 70 100 200 Any changing of specification will not be informed individual Page 5 of 6 5 Page

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