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RB521S-30 fiches techniques PDF

SEMTECH - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Numéro de référence RB521S-30
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Fabricant SEMTECH 
Logo SEMTECH 





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RB521S-30 fiche technique
RB521S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for low current rectification and high speed
switching applications
Features
• Extremely small surface mounting type
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
C
Top View
Marking Code: "C"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60Hz for Cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 200 mA
Reverse Current
at VR = 10 V
Symbol
VR
IO
IFSM
Tj
Ts
Value
30
200
1
125
- 40 to + 125
Unit
V
mA
A
OC
OC
Symbol
VF
IR
Max.
0.5
30
Unit
V
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006

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