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CDBMHT360-HF fiches techniques PDF

Comchip Technology - SMD Schottky Barrier Rectifiers

Numéro de référence CDBMHT360-HF
Description SMD Schottky Barrier Rectifiers
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBMHT360-HF fiche technique
SMD Schottky Barrier Rectifiers
CDBMHT340-HF Thru. CDBMHT3100-HF
Reverse Voltage: 40 to 100 Volts
Forward Current: 3.0 Amp
RoHS Device
Halogen Free
SOD-123HT
Features
- Excellent power dissipation offersbetter reverse
leakage current and thermal resistance.
- Low profile package is 40% thinner than standards
SOD-123.
- Low power loss, high efficiency.
- High current capability, low forward voltage drop.
- High surge capability.
- Guard ring for overvoltage protection.
- Ultra high-speed switching.
- Silicon epitaxial planar chip, metal silicon junction.
- Heat sink bottom.
- Lead-free parts meet environmental standards of
MIL-STD-19500/228
Mechanical data
- Epoxy : UL94-V0 rated flame retardant.
- Case: Molded plastic, SOD-123HT/Mini SMA.
- Terminals: Solderable per MIL-STD-750, method 2026.
- Polarity: Indicated by cathode band.
- Mounting Position : Any.
- Weight: 0.011 grams approx.
0.146(3.70)
0.130(3.30)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
0.031(0.10) Typ.
0.083(2.10)
0.075(1.90)
0.024(0.6) Typ.
0.051(1.30)
0.043(1.10)
0.047(1.20)
0.039(1.00)
0.039(1.00)
0.024(0.60)
0.031(0.80) Typ.
0.031(0.80)
0.024(0.60)
0.033(0.85)
0.030(0.75)
0.047(1.20)
0.039(1.00)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
CDBMH
T340-HF
Repetitive peak reverse voltage
VRRM
40
Continuous reverse voltage
VR 40
RMS voltage
VRMS
28
Max. Forward rectified current
IO
Maximum forward voltage at IF=3.0A
Max. Forward surge current, 8.3ms single
half sine-wave superimposed on rated
load (JEDEC method)
VF
IFSM
0.55
Max. Reverse current
VR=VRRM TJ=25°C
VR=VRRM TJ=100°C
IR
IR
CDBMH
T360-HF
60
60
42
3.0
0.70
50
0.2
10
CDBMH
T3100-HF
100
100
70
0.85
Thermal resistance
Junction to ambient
Junction to case
Typ. Diode junction capacitance (Note 1)
Operating temperature
Storage temperature range
Note : 1. F=1MHz and applied 4V DC reverse voltage
RθJA
RθJC
CJ
TJ
TSTG
-55 to +125
70
35
160
-55 to +150
-65 to +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB056
Comchip Technology CO., LTD.
Unit
V
V
V
A
V
A
mA
°C/W
°C/W
pF
°C
°C
REV:A
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