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XBS204S17R-G fiches techniques PDF

Torex Semiconductor - Schottky Barrier Diode

Numéro de référence XBS204S17R-G
Description Schottky Barrier Diode
Fabricant Torex Semiconductor 
Logo Torex Semiconductor 





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XBS204S17R-G fiche technique
XBS204S17R-G
Schottky Barrier Diode, 2A, 40V Type
ETR1612-002a
FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: VF=0.485V (TYP.)
: IF(AVE)=2A
: VRM=40V
APPLICATIONS
Rectification
Protection against reverse connection of battery
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
40 V
Reverse Voltage (DC)
VR 40 V
Forward Current (Average)
IF(AVE) 2 A
Non Continuous
Forward Surge Current*1
Junction Temperature
Storage Temperature Range
IFSM
50 A
Tj 125
Tstg -55+150
PACKAGING INFORMATION
MARKING RULE
①②③④⑤⑥: 204S17(Product Number)
⑦⑧
: Assembly Lot Number
Cathode Bar
PRODUCT NAME
SMA
Unit: mm
PRODUCT NAME
DEVICE ORIENTATION
XBS204S17R-G
SMA (Halogen & Antimony free)
XBS204S17R
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2trr measurement circuit
Bias
Pulse Generatrix
VF1
VF2
IR1
IR2
Ct
trr
IF=200μA
IF=2A
VR=20V
VR=40V
VR=1V , f=1MHz
IF=IR=10mA , irr=1mA
Device Under test
Oscilloscope
MIN.
-
-
-
-
-
LIMITS
TYP.
0.15
0.485
2.5
6
180
51
Ta=25
MAX.
-
0.54
-
200
-
-
UNIT
V
V
μA
μA
pF
ns
1/3

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