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Taiwan Semiconductor - Glass Passivated High Efficient Plastic Rectifiers

Numéro de référence EGP10K
Description Glass Passivated High Efficient Plastic Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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EGP10K fiche technique
EGP10A THRU EGP10M
Features
1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
DO-41
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature soldering guaranteed:
300/10seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
Cases: JEDEC DO-41 molded plastic over glass
body
Lead: Plated axial leads, solderable per MIL-STD-
750, Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol EGP EGP EGP EGP EGP EGP EGP EGP Units
10A 10B 10D 10F 10G 10J 10K 10M
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@TA = 55
VDC 50 100 200 300 400 600 800 1000 V
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
30.0
A
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
0.95
1.25
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
IR
5.0
100.0
Maximum Reverse Recovery Time ( Note 1 )
TJ=25
Trr
50
Typical Junction Capacitance ( Note 2 )
Cj
20
15
Typical Thermal Resistance (Note 3)
RθJA
70
Operating Temperature Range
TJ
-65 to + 150
Storage Temperature Range
TSTG
-65 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
1.7
75
V
uA
uA
nS
pF
/W
- 584 -

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