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PDF HMC7543 Data sheet ( Hoja de datos )
| Número de pieza | HMC7543 | |
| Descripción | E-Band Power Amplifier | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
71 GHz to 76 GHz, E-Band Power Amplifier
With Power Detector
HMC7543
FEATURES
Gain: 21.5 dB typical
Output power for 1 dB compression (P1dB): 25 dBm typical
Saturated output power (PSAT): 26.5 dBm typical
Output third-order intercept (OIP3): 30 dBm typical
Input return loss: 12 dB typical
Output return loss: 12 dB typical
DC supply: 4 V at 450 mA
No external matching required
Die size: 3.599 mm × 1.999 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul radio systems
Test and measurement
GENERAL DESCRIPTION
The HMC7543 is an integrated E-band gallium arsenide
(GaAs), pseudomorphic (pHEMT), monolithic microwave
integrated circuit (MMIC), medium power amplifier with a
temperature compensated on-chip power detector that operates
from 71 GHz to 76 GHz. The HMC7543 provides 21.5 dB of
gain, 25 dBm of output power at 1 dB compression, and 26.5 dBm
of saturated output power at 20% power added efficiency (PAE)
from a 4 V power supply. The HMC7543 exhibits excellent
linearity and is optimized for E-band communications and high
capacity wireless backhaul radio systems. The amplifier configura-
tion and high gain make it an excellent candidate for last stage
signal amplification before the antenna. All data is taken with
the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil
thick × 7 mil long ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM
4 567
VDD1
VDD2
89
VDD3
10 11
VDD4
3
RFIN
2
1
HMC7543
RFOUT
12
13
14
VGG1
VGG2
25 24
23 22
VGG3
21 20 19
Figure 1.
VGG4
18
VREF
17 16
VDET
15
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
4
GND
5
VDD1
67
GND VDD2
8
GND
9
VDD3
10
GND
11
VDD4
HMC7543
3 GND
2 RFIN
1 GND
HMC7543
TOP VIEW
(Not to Scale)
GND 12
RFOUT 13
GND 14
GND
25
VGG1
GND
VGG2
24 23 22
GND
21
VGG3
GND
VGG4
20 19 18
Figure 2. Pad Configuration
GND
17
VREF
16
VDET
15
Table 4. Pad Function Descriptions
Pad No.
Mnemonic Description
1, 3, 4, 6, 8, 10, 12, GND
14, 17, 19, 21, 23, 25
Ground Connection (See Figure 3).
2 RFIN RF Input. DC couple RFIN and match it to 50 Ω (See Figure 4).
5, 7, 9, 11
13
VDD1 to VDD4
RFOUT
Drain Bias Voltage for the Power Amplifier (See Figure 5).
RF Output. AC couple RFOUT and match it to 50 Ω (see Figure 6).
15 VDET Detector Voltage for the Power Detector (See Figure 7). VDET is the dc voltage representing the RF
output power rectified by the diode, which is biased through an external resistor. Refer to the typical
application circuit for the required external components (see Figure 40).
16 VREF Reference Voltage for the Power Detector (See Figure 7). VREF is the dc bias of the diode biased through
an external resistor used for temperature compensation of VDET. Refer to the typical application circuit
for the required external components (see Figure 40).
18, 20, 22, 24
VGG4 to VGG1
Gate Bias Voltage for the Power Amplifier (See Figure 8). For the required external components, see
Figure 40.
Die Bottom GND Ground. The die bottom must be connected to the RF/dc ground (see Figure 3).
Rev. A | Page 5 of 16
5 Page 
Data Sheet
28 490
24 470
GAIN
20
450
POUT
16
430
PAE
12 410
IDD
8 390
4 370
0 350
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 33. POUT, Gain, PAE, and IDD vs. Input Power, RF = 76 GHz,
Drain Current (IDD) = 350 mA
3.0
2.5
2.0
1.5
71GHz
72GHz
1.0 73GHz
74GHz
75GHz
76GHz
0.5
0
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 34. Power Dissipation vs. Input Power at Various Frequencies,
Drain Current (IDD) = 450 mA, TA = 85°C
10
1
TA = –55°C
TA = +25°C
TA = +85°C
0.1
0.01
–16 –11 –6
–1
4
9 14 19 24 29
OUTPUT POWER (dBm)
Figure 35. Detector Output Voltage (VOUT) vs. Output Power at
Various Temperatures, Drain Current (IDD) = 450 mA, RF = 71 GHz
HMC7543
50
45
40
35
71GHz
72GHz
30
73GHz
74GHz
75GHz
76GHz
25
20
8 9 10 11 12 13 14 15 16
POUT/TONE (dBm)
Figure 36. Output Third-Order Intermodulation Distortion (IMD3) vs.
POUT/Tone at Various Frequencies, Drain Current (IDD) = 450 mA
3.0
2.5
71GHz
72GHz
2.0 73GHz
74GHz
75GHz
76GHz
1.5
1.0
0.5
0
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
INPUT POWER (dBm)
Figure 37. Power Dissipation vs. Input Power at Various Frequencies,
Drain Current (IDD) = 350 mA, TA = 85°C
10
1
TA = –55°C
TA = +25°C
TA = +85°C
0.1
0.01
–16 –11 –6
–1
4
9 14 19 24 29
OUTPUT POWER (dBm)
Figure 38. Detector Output Voltage (VOUT) vs. Output Power at
Various Temperatures, Drain Current (IDD) = 450 mA, RF = 76 GHz
Rev. A | Page 11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HMC7543.PDF ] | |
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