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PDF CR02AM-8 Data sheet ( Hoja de datos )
| Número de pieza | CR02AM-8 | |
| Descripción | LOW POWER USE GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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CR02AM-8A
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.3A
• VDRM ....................................................................... 400V
• IGT ......................................................................... 100µA
APPLICATION
Strobe flasher
132
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8
400
500
320
400
320
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With gate to cathode resistance RGK=1kΩ.
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=30°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
V
V
V
Ratings
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
0.23
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999
1 page  
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
120
TYPICAL EXAMPLE
Tj = 125°C
100
80
60
40
20
0
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5 Tj = 25°C
3 IH (25°C) = 1mA
2 IGT (25°C) = 25µA
101
7
5
3
2
100
7
5
3
DISTRIBUTION
,,,,,,,,,,,,,,,,,,,,,,,,,T,,,,,YP,,,,,ICA,,,,,L ,,,,,EXA,,,,,M,,,,,PLE
2
10–1
–60 –40–20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
100
80
60 # 2
40 TYPICAL EXAMPLE
# 1 IGT (25°C) = 10µA
20 # 2 IGT (25°C) = 66µA
Tj = 125°C, RGK = 1kΩ
#1
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
400 # 1 13µA 1.6mA
# 2 59µA 1.8mA
#1
300
#2
200
100
0 Tj = 25°C
10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7 IGT (25°C)
5 # 1 # 1 10µA
4 # 2 # 2 66µA
3
2
102
7
5
4
3
2
Tj = 25°C
101
100 2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CR02AM-8.PDF ] | |
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