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PDF V23990-P764-A-PM Data sheet ( Hoja de datos )
| Número de pieza | V23990-P764-A-PM | |
| Descripción | Power Integrated Module | |
| Fabricantes | Vincotech | |
| Logotipo |  |
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flow PIM 2 3rd
Features
● 3~rectifier,BRC,Inverter, NTC
● Very Compact housing, easy to route
● IGBT3/ EmCon3 technology for low saturation
losses and improved EMC behavior
Target Applications
● Motor Drives
● Power Generation
Types
● V23990-P764-A-PM
V23990-P764-A-PM
datasheet
600 V / 75 A
flow 2 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current
Surge forward current
I2t-value
Power dissipation
Maximum Junction Temperature
Inverter IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
DC current
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Tj≤150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
100
100
1000
5000
123
186
150
V
A
A
A2s
W
°C
600
80
100
150
144
219
±20
6
360
175
V
A
A
W
V
µs
V
°C
copyright Vincotech
1 23 Dec 2014 / Revision: 4
1 page  
Parameter
Brake IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
Brake Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
Thermal resistance chip to case
Brake FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Characteristic Values
Symbol
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
V23990-P764-A-PM
datasheet
Value
Unit
Min
Typ
Max
VGE(th)
VCE=VGE
VCE(sat)
15
ICES 0
IGES 20
Rgint
td(on)
tr
td(off)
tf
Rgoff=8 Ω
Rgon=8 Ω
±15
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
±15
RthJH Thermal grease
thickness≤50µm
RthJC λ = 0,61 W/m·K
600
0
300
25
480
0,0008
Tj=25°C
Tj=150°C
5
5,8 6,5
V
50 Tj=25°C
Tj=150°C
1,58
1,82
2,1
V
Tj=25°C
Tj=150°C
0,5 mA
Tj=25°C
Tj=150°C
700 nA
none
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
50 Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
100
102
14
18,6
158
185
108
125
0,43
0,63
1,42
1,97
ns
mWs
3140
Tj=25°C 200 pF
90
50 Tj=25°C 310 nC
0,8
0,53
K/W
VF
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
10
Tj=25°C
1,2 1,78 2,1
V
Tj=150°C
1,77
1,81
K/W
1,19
K/W
VF
Ir ±15
IRRM
trr
Qrr Rgon=8 Ω
di(rec)max
/dt
Erec
±15
RthJH Thermal grease
thickness≤50µm
RthJC λ = 0,61 W/m·K
300
300
20
50
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,65
1,56
2,1
140
V
µA
40
47
22
141
1
2,37
6000
3416
0,35
0,58
A
ns
µC
A/µs
mWs
1,85
1,22
K/W
R25 Tol. ±5%
DR/R R100=1486.1Ω
P
B(25/100) Tol. ±3%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
210
4000
23,1
kΩ
%/K
mW
K
copyright Vincotech
5 23 Dec 2014 / Revision: 4
5 Page 
Output Inverter
V23990-P764-A-PM
datasheet
Figure 21
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
300
250
200
150
100
50
0
0
At
Tj =
175
50
°C
100
Output inverter IGBT
Figure 22
Collector current as a
function of heatsink temperature
IC = f(Th)
120
100
80
60
40
20
150
Th ( o C)
200
single heating
overall heating
0
0
At
Tj =
VGE =
50
175 °C
15 V
100
Output inverter IGBT
150 Th ( o C)
200
Figure 23
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
200
150
100
50
0
0
At
Tj =
50
175 °C
100
Output inverter FWD
150
Th ( o C)
200
Figure 24
Forward current as a
function of heatsink temperature
IF = f(Th)
105
90
75
60
45
30
15
0
0
At
Tj =
175
50
°C
100
Output inverter FWD
150 Th ( o C) 200
copyright Vincotech
11 23 Dec 2014 / Revision: 4
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet V23990-P764-A-PM.PDF ] | |
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