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Número de pieza | BCR25CM-12LB | |
Descripción | Triac | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR25CM-12LB (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! BCR25CM-12LB
600V - 25A - Triac
Medium Power Use
Features
• IT (RMS) : 25 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 50 mA
Outline
Preliminary Datasheet
R07DS1152EJ0100
Rev.1.00
Jan 29, 2014
• Tj: 150 °C
• Planar Passivation Type
• Non-Insulated Type
N-G
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Ratings
25
250
313
5
0.5
10
2
–40 to +150
–40 to +150
2.1
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 115°C Note3
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Typical value
R07DS1152EJ0100 Rev.1.00
Jan 29, 2014
Page 1 of 7
1 page BCR25CM-12LB
Holding Current vs.
Junction Temperature
103
Typical Example
102
101
-40
0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
III Quadrant
100
80 I Quadrant
60
40
20
0
10
100
1000
10000
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 125°C
Main Current
IT
(di/dt)c
τ Time
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
I Quadrant
Minimum
Characteristics
Value
100
101
III Quadrant
102
103
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1152EJ0100 Rev.1.00
Jan 29, 2014
Preliminary
Latching Current vs.
Junction Temperature
103
Distribution
T2+, G–
Typical
Example
102
101
T2–, G–
Typical
Example
100
-40
0
T2+, G+
Typical
Example
40
80
120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
Typical Example
Tj = 150°C
120
III Quadrant
100
80
I Quadrant
60
40
20
0
10
100
1000
10000
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
102
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
I Quadrant
101
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
100
100
Minimum
Characteristics
Value
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BCR25CM-12LB.PDF ] |
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