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TGF2023-2-01 Datasheet دیتاشیت PDF دانلود

دیتاشیت - TriQuint Semiconductor - 6 Watt Discrete Power GaN on SiC HEMT

شماره قطعه TGF2023-2-01
شرح مفصل 6 Watt Discrete Power GaN on SiC HEMT
تولید کننده TriQuint Semiconductor 
آرم TriQuint Semiconductor 


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TGF2023-2-01 شرح
Applications
Defense & Aerospace
Broadband Wireless
TGF2023-2-01
6 Watt Discrete Power GaN on SiC HEMT
Product Features
Frequency Range: DC - 18 GHz
38 dBm Nominal PSAT at 3 GHz
71.6% Maximum PAE
18 dB Nominal Power Gain at 3 GHz
Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-01 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2023-2-01 typically provides 37.7 dBm of
saturated output power with power gain of 20.7 dB at
3 GHz. The maximum power added efficiency is
71.6 % which makes the TGF2023-2-01 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Pad Configuration
Pad No.
1
2
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
Datasheet: Rev C 09-27-13
© 2013 TriQuint
Ordering Information
Part ECCN Description
TGF2023-2-01 EAR99
6 Watt GaN HEMT
- 1 of 22 -
Disclaimer: Subject to change without notice
www.triquint.com

قانون اساسیصفحه 22
دانلود [ TGF2023-2-01 دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT TriQuint Semiconductor
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TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT TriQuint Semiconductor
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TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT TriQuint Semiconductor
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