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Número de pieza | TGF2023-2-05 | |
Descripción | 25 Watt Discrete Power GaN on SiC HEMT | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGF2023-2-05 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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• Defense & Aerospace
• Broadband Wireless
TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz
• 43 dBm Nominal PSAT at 3 GHz
• 78.3% Maximum PAE
• 18 dB Nominal Power Gain at 3 GHz
• Bias: VD = 12 - 32 V, IDQ = 100 - 500 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 0.82 x 1.44 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-05 is a discrete 5 mm GaN on
SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-05 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
Pad Configuration
Pad No.
1-4
5
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2023-2-05 typically provides 43.0 dBm of
saturated output power with power gain of 18 dB at
3 GHz. The maximum power added efficiency is
78.3 % which makes the TGF2023-2-05 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
Ordering Information
Part
ECCN Description
TGF2023-2-05 3A001b.3.b 25 Watt GaN HEMT
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 1 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Thermal and Reliability Information (1)
Parameter
Test Conditions
Value
Thermal Resistance, θJC (No RF Drive)
Channel Temperature, TCH (No RF Drive)
Median Lifetime, TM (No RF Drive)
Thermal Resistance, θJC (Under RF Drive)
Channel Temperature, TCH (Under RF Drive)
Median Lifetime, TM (Under RF Drive)
VD = 28 V, ID = 0.5 A ,
PD = 14 W, Tbaseplate = 70°C
VD = 28 V, ID = 1.54 mA,
POUT = 43.9 dBm, PD = 18 W,
Tbaseplate = 70°C
5.79
151
1.57 x 10^9
6.09
180
7.99 x 10^7
Notes:
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Units
ºC/W
°C
Hrs
°C/W
°C
Hrs
Median Lifetime
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Thermal Resistance
8.0 θJC vs. Baseplate Temperature vs. PD
7.5 PD = 27 W
PD = 24 W
7.0 PD = 19 W
PD = 14 W
6.5
6.0
5.5
5.0
4.5
20 30 40 50 60 70 80 90
Baseplate Temperature (°C)
100
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 5 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page TGF2023-2-05
25 Watt Discrete Power GaN on SiC HEMT
Load Pull Contours
Load pull signal: 10%, 100 μs pulses. Bond wires included. Measured data provided by Modelithics.
Load Pull
Model and Measured Power at 10GHz, 12V, 250mA, Pin = 35dBm, 25°C
Γs = 0.69 ∠ -152°
Γs2 = 0.70 ∠ -161°
Γs3 = 0.43 ∠ 167°
0.4
0.3
0.2
Max Model Power is 39.5dBm
at Γl = 0.87∠ -163°
Max Measured Power is 39.1dBm
at Γl = 0.82∠ -163°
0.1
-0.1
-0.2
39.14
39.47
35.99
36.51
35.09
37.08
38.38 37.7
34.2
36.01 35.06
38.2 37.06
Model
Measured
Load Pull
Model and Measured PAE at 10GHz, 12V, 250mA, Pin = 35dBm, 25°C
Γs = 0.69 ∠ -152°
Γs2 = 0.70 ∠ -161°
Γs3 = 0.43 ∠ 167°
0.4
0.3
0.2
Max Model PAE is 43.4%
at Γl = 0.86∠ -166°
Max Measured PAE is 42.4%
at Γl = 0.81∠ -165°
0.1
7.43
15.3
24.8 15.9 9.93
-0.1
36.3
42.842.2
30.3
23.1
27.2
36.731.7
-0.2
Model
Measured
Load Pull
Model and Measured Power at 10GHz, 28V, 100mA, Pin = 35dBm, 25°C
Γs = 0.69 ∠ -152°
Γs2 = 0.70 ∠ -161°
Γs3 = 0.43 ∠ 167°
0.4
0.3
0.2
Max Model Power is 42.3dBm
at Γl = 0.85∠ -173°
Max Measured Power is 41.7dBm
at Γl = 0.8∠ -175°
0.1
41.14
40.65
39.1
39.8 39.43
40.21
42.27
41.31
40.4339.63
38.91
38.24
-0.1
-0.2
Model
Measured
Load Pull
Model and Measured PAE at 10GHz, 28V, 100mA, Pin = 35dBm, 25°C
Γs = 0.69 ∠ -152°
Γs2 = 0.70 ∠ -161°
Γs3 = 0.43 ∠ 167°
0.4
0.3
0.2
Max Model PAE is 51.1%
at Γl = 0.86∠ -174°
Max Measured PAE is 48.9%
at Γl = 0.8∠ -177°
0.1
20.5
45.3
37.9
31.726.6
23.5
16.3
50.7 41 29.5
-0.1
-0.2
Model
Measured
Datasheet: Rev C 9-27-13
© 2013 TriQuint
- 11 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet TGF2023-2-05.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGF2023-2-01 | 6 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
TGF2023-2-02 | 12 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
TGF2023-2-05 | 25 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
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