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PDF TS61001 Data sheet ( Hoja de datos )
| Número de pieza | TS61001 | |
| Descripción | Full-bridge FET Driver | |
| Fabricantes | Semtech | |
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Hay una vista previa y un enlace de descarga de TS61001 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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TS61001
Full-bridge FET Driver
TRIUNE PRODUCTS
Features
• Supports Qi®, PMA, A4WP and proprietary wireless power
applications
• Power outputs scalable based on FET size
• Support for half and full-bridge power sections
• Integrated comparator
• Low external component count
• Available in 28 pin 5x5 QFN
Applications
• Multi-standard compliant and non-compliant wireless
chargers for:
Cell Phones and Smartphones
GPS Devices
Digital Cameras
Tablets and eReaders
Portable Lighting
• Full and half-bridge power converters
• Motor drive applications
Description
The TS61001 is a high-voltage FET driver that can be used to
drive N-channel devices in full or half bridge configurations.
The TS61001 can support various power converter
applications, multiple standard and proprietary wireless power
applications, and motor driver systems.
Specifications
• Drives both low side and high side N-channel MOSFETS
• 6Ω pull-up, 2Ω pull-down gate drivers
• Independent TTL compatible inputs
• Floating gate drive and bootstrap circuits for driving high
side devices – up to 85V for the bootstrap supply voltage
• 5 - 12V gate drive capability allows compatibility with a
wide range of FETs
• Fast propagation delays (<50nS typical)
• Matched channel to channel delays (<25nS mismatch)
• Fast rise and fall times
• Optional break before make detection to set minimum
dead time protection
• Available comparator, amplifier and 3.3V linear regulator
(10mA capability) for supporting circuitry
• Under voltage lock out protection
• Over temperature shut down (TSD) protection
Typical Application Circuit
TS61001
Final Datasheet
March 19, 2015
Rev 1.2
www.semtech.com
1 of 10
Semtech
Proprietary & Confidential
1 page  
Absolute Maximum Rating
Over operating free–air temperature range unless otherwise noted(1, 2)
Parameter
Value
VCCG, VCC
13.2
VB1, VB2
13.2 (relative to VS1, VS2)
SDATA, SCLK
3.6
LS1ON, LS2ON, HS1ON, HS2ON
3.6
Unit
V
V
V
V
COMPN, COMPP, COMPOUT
3.6 V
Electrostatic Discharge – Human Body Model
+/-2k
V
Electrostatic Discharge – Charge Device Model
+/-500
V
Lead Temperature (soldering, 10 seconds)
260 °C
Notes:
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
Thermal Characteristics
Symbol
Parameter
Value
ΘJA
Thermal Resistance Junction to Air (Note 1)
34.5
ΘJC
Thermal Resistance Junction to Case (Note 1)
2.5
TSTG
Storage Temperature Range
-65 to 150
TJ MAX
Maximum Junction Temperature
150
TJ
Operating Junction Temperature Range
-40 to 125
Note 1: Assumes 16LD 3x3 QFN with hi-K JEDEC board and 13.5 inch2 of 1 oz Cu and 4 thermal vias connected to PAD
Units
°C/W
°C/W
°C
°C
°C
Recommended Operating Conditions
Symbol
VCCG / VCC
Parameter
Input Operating Voltage
CVCCBYP
C3P3BYP
CV5INTBYP
CBST
VCCG / VCC Bypass Capacitors
Internal 3.3V Bypass Capacitor
Internal 5V Bypass Capacitor
Bootstrap Capacitor
Min Typ
58
100
10
4.7
100
47
Max
12.5
Unit
V
nF
uF
uF
nF
nF
TS61001
Final Datasheet
March 19, 2015
Rev 1.2
www.semtech.com
5 of 10
Semtech
Proprietary & Confidential
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TS61001.PDF ] | |
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