DataSheetWiki


CGHV96050F1 fiches techniques PDF

CREE - Input/Output Matched GaN HEMT

Numéro de référence CGHV96050F1
Description Input/Output Matched GaN HEMT
Fabricant CREE 
Logo CREE 





1 Page

No Preview Available !





CGHV96050F1 fiche technique
CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
PackPaNg:eCTGyHpVe:9464005201F01
Typical Performance Over 7.9-8.4 GHz (TC = 25˚C)
Parameter
7.9 GHz 8.0 GHz 8.1 GHz 8.2 GHz 8.3 GHz 8.4 GHz
Units
Linear Gain
17.0 16.7 16.4 15.9 15.2 14.6
dB
Output Power
22.4 28.2 28.2 31.6 31.6 31.6
W
Power Gain
15.6 15.0 15.1 14.5 14.0 13.2
dB
Power Added Efficiency
30 37 37 39 38 37 %
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2
Features
7.9 - 8.4 GHz Operation
80 W POUT typical
>13 dB Power Gain
33 % Typical Linear PAE
50 Ohm Internally Matched
<0.1 dB Power Droop
Applications
Satellite Communication
Terrestrial Broadband
Subject to change without notice.
www.cree.com/rf
1

PagesPages 14
Télécharger [ CGHV96050F1 ]


Fiche technique recommandé

No Description détaillée Fabricant
CGHV96050F1 Input/Output Matched GaN HEMT CREE
CREE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche