|
|
PDF CMPA0060025F Data sheet ( Hoja de datos )
| Número de pieza | CMPA0060025F | |
| Descripción | GaN MMIC Power Amplifier | |
| Fabricantes | CREE | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CMPA0060025F (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
CMPA0060025F
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be
achieved in a small footprint screw-down package.
PaPckNa:gCeMTPyApe0:076800002159F
Typical Performance Over 20 MHz - 6.0 GHz (TC = 25˚C)
Parameter
Gain
Output Power @ PIN = 32 dBm
Power Gain @ PIN = 32 dBm
Efficiency @ PIN = 32 dBm
Note1: VDD = 50 V, IDQ = 500 mA
20 MHz
21.4
26.9
12.3
63
0.5 GHz
20.1
30.2
12.8
55
1.0 GHz
19.3
26.3
12.2
40
2.0 GHz
16.7
23.4
11.7
31
3.0 GHz
16.6
24.5
11.9
33
4.0 GHz
16.8
24.0
11.8
31
5.0 GHz
15.7
20.9
11.3
28
6.0 GHz
15.5
18.6
10.7
26
Units
dB
W
dB
%
Features
• 17 dB Small Signal Gain
• 25 W Typical PSAT
• Operation up to 50 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” total product size
Applications
• Ultra Broadband Amplifiers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/wireless
Figure 1.
1
1 page  
Typical Performance
Gain vs Input Power at 50V
as a FuncGtiaoinnvso. IfnpFutrpeoqwuere50nVcy
25
20
15
70%
60%
50%
40%
Efficiency vs Input Power at 50 V
as a FunctionEFoF fvsF. Irnepuqt puoewnerc50yV
20 MHz
1.0 GHz
2.0 GHz
4.0 GHz
6.0 GHz
10
20 MHz
1.0 GHz
5 2.0 GHz
4.0 GHz
6.0 GHz
0
10 15 20 25 30 35
Input Power (dBm)
30%
20%
10%
0%
10 15 20 25 30
Input Power (dBm)
35
Gain vs Input Power at 40V
as a FunctioGnaion fvsFInrpeuqt Puoewenrcy
25
20
15
70%
60%
50%
40%
Efficiency vs Input Power at 40 V
as a FunctioEFnF vosf. InFpruet pqouweern40cVy
20 MHz
1.0 GHz
2.0 GHz
4.0 GHz
6.0 GHz
30%
10
20 MHz
1.0 GHz
5 2.0 GHz
4.0 GHz
6.0 GHz
20%
10%
0 0%
10 15 20 25 30 35
10 15 20 25 30
Input Power (dBm)
Input Power (dBm)
35
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5 CMPA0060025F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
11 CMPA0060025F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet CMPA0060025F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CMPA0060025F | GaN MMIC Power Amplifier | CREE |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |