DataSheetWiki


CMPA2560025F fiches techniques PDF

CREE - GaN MMIC Power Amplifier

Numéro de référence CMPA2560025F
Description GaN MMIC Power Amplifier
Fabricant CREE 
Logo CREE 





1 Page

No Preview Available !





CMPA2560025F fiche technique
CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier enabling very wide bandwidths to
be achieved in a small footprint screw-down package featuring a Copper-
Tungsten heat-sink.
PaPckNa:gCeMTPyApe2:576800002159F
Typical Performance Over 2.5-6.0 GHz (TC = 25˚C)
Parameter
2.5 GHz
4.0 GHz
6.0 GHz
Gain
27.5 24.3 23.1
Saturated
Output
Power,
P1
SAT
35.8 37.5 25.6
Power Gain @ POUT 43 dBm
23.1 20.9 16.3
PAE @ POUT 43 dBm
31.5 32.8 30.7
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Units
dB
W
dB
%
Features
24 dB Small Signal Gain
25 W Typical PSAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Applications
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/rf
Figure 1.
1

PagesPages 11
Télécharger [ CMPA2560025F ]


Fiche technique recommandé

No Description détaillée Fabricant
CMPA2560025F GaN MMIC Power Amplifier CREE
CREE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche