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SeCoS - Plastic Encapsulate Transistors

Numéro de référence BD438
Description Plastic Encapsulate Transistors
Fabricant SeCoS 
Logo SeCoS 





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BD438 fiche technique
Elektronische Bauelemente
BD438/BD440/BD442
PNP Type
Plastic Encapsulate Transistors
Features
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
* Amplifier and switching applications
MAXIMUM RATINGS* TA=25oC unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
BD438
BD440
BD442
BD438
BD440
BD442
-45
-60
-80
-45
-60
-80
V
V
VEBO
IC
PC
TJ
Tstg
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
-5
-4
1.25
150
-55-150
V
A
W
TO-126
8.0±0.2
3.2±0.2
2.0±0.2
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
1.4±0.1
12 3
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
Test conditions
IC=-100µA, IE=0
V(BR)CBO
BD438
BD440
BD442
IC=-100mA, IB=0
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
IE=-100µA, IC=0
VCB=-45V, IE=0
VCB=-60V, IE=0
VCB=-80V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-10mA
BD438
BD440
BD442
BD438
BD440
BD442
BD438
BD440
BD442
hFE(2)
VCE=-1V, IC=-500mA
BD438
BD440/BD442
hFE(3)
VCE=-1V, IC=-2A
BD438
BD440
BD442
VCE(sat)
IC=-3A, IB=-300mA
BD438
BD440/BD442
VBE
VCE=-1V, IC=-2A
BD438
BD440/BD442
fT VCE=-1V, IC=-250mA, f=1MHz
MIN
-45
-60
-80
-45
-60
-80
-5
30
20
15
85
40
40
25
15
3
TYP MAX UNIT
V
V
V
-0.1 µA
-1 µA
375
475
-0.7
V
-0.8
-1.1
V
-1.5
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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