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Número de pieza | STL33N60M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STL33N60M2
N-channel 600 V, 0.115 Ω typ., 22 A MDmesh™ M2
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL33N60M2
VDS @ TJmax
650 V
RDS(on)max
0.135 Ω
ID
22 A
Features
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STL33N60M2
Marking
33N60M2
Table 1: Device summary
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2015
DocID024325 Rev 3
This is information on a product in full production.
1/15
www.st.com
1 page STL33N60M2
Symbol
Parameter
Table 7: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 26 A, VGS = 0
ISD = 26 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17: "
Unclamped inductive load
test circuit")
- 22 A
- 88 A
- 1.6 V
- 375
ns
- 5.6
µC
- 30
A
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 26 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17: " Unclamped
inductive load test circuit")
- 478
- 7.7
- 32.5
ns
µC
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID024325 Rev 3
5/15
5 Page STL33N60M2
Dim.
A
A1
A3
b
D
E
D2
E1
E2
e
L
Package mechanical data
Table 8: PowerFLAT™ 8x8 HV mechanical data
mm
Min.
Typ.
Max.
0.75 0.85
0.00
0.95
0.05
0.10 0.20
0.90 1.00
0.30
1.10
7.90 8.00
7.90 8.00
8.10
8.10
7.10 7.20
2.65 2.75
4.25 4.35
7.30
2.85
4.45
2.00
0.40 0.50
0.60
Figure 21: PowerFLAT™ 8x8 HV footprint
All dimensions are in millimeters.
DocID024325 Rev 3
11/15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet STL33N60M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STL33N60M2 | N-channel Power MOSFET | STMicroelectronics |
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