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Número de pieza | STL7NM60N | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STL7NM60N (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! STL7NM60N
N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5
MDmesh™ II Power MOSFET
Features
Order code
STL7NM60N
VDSS @
TJMAX
650 V
RDS(on)
max.
< 0.90 Ω
ID
5.8 A(1)
1. The value is rated according Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
87
11
5
4
12
14
1
PowerFLAT™ 5x5
Figure 1. Internal schematic diagram
D DD
Pin 1
14 13 12 11 G
(not connected)
Drain
S2
10 S
S3 9S
S4 5 6 7 8S
DD D
Top view
Table 1. Device summary
Order code
STL7NM60N
Marking
7NM60N
Package
PowerFLAT™ 5x5
Packaging
Tape and reel
November 2011
Doc ID 18348 Rev 2
1/13
www.st.com
13
1 page STL7NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD Source-drain current
ISDM
(1) (2)
,
Source-drain current (pulsed)
VSD(3) Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 5 A, VGS=0
ISD= 5 A,
di/dt = 100 A/µs,
VDD = 60 V
(see Figure 16)
5.8 A
-
23 A
- 1.3 V
213
- 1.5
14
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 5 A,
265
di/dt = 100 A/µs,
- 1.8
VDD = 60 V, Tj= 150 °C
(see Figure 16)
14
ns
nC
A
1. Pulse width limited by safe operating area.
2. When mounted on FR-4 board of 1inch², 2 oz Cu.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 18348 Rev 2
5/13
5 Page STL7NM60N
Package mechanical data
Figure 21. PowerFLAT™ 5x5 recommended footprint (dimensions in mm)
Doc ID 18348 Rev 2
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STL7NM60N.PDF ] |
Número de pieza | Descripción | Fabricantes |
STL7NM60N | N-channel Power MOSFET | STMicroelectronics |
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