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PDF STL70N10F3 Data sheet ( Hoja de datos )
| Número de pieza | STL70N10F3 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL70N10F3
N-channel 100 V, 0.0078 Ω, 16 A STripFET™ III Power MOSFET
in PowerFLAT™ 5x6 package
Datasheet — production data
Features
Order code VDSS
STL70N10F3 100 V
RDS(on) max
@VGS=10V
0.0084 Ω
ID PTOT
16 A 136 W
■ Improved die-to-footprint ratio
■ Very low thermal resistance
■ Low on-resistance
Applications
■ Switching applications
Description
This device is an N-channel enhancement mode
Power MOSFET produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
$$$$
Table 1. Device summary
Order code
STL70N10F3
Marking
70N10F3
'333
"OTTOM 6IEW
Package
PowerFLAT™ 5x6
4OP 6IEW
!-6
Packaging
Tape and reel
May 2012
This is information on a product in full production.
Doc ID 018794 Rev 3
1/17
www.st.com
17
1 page  
STL70N10F3
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 16 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A,
di/dt = 100 A/µs,
VDD=80 V
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%.
Min Typ. Max. Unit
- - 16 A
- - 64 A
- - 1.2 V
56
- 144 -
5
ns
nC
A
Doc ID 018794 Rev 3
5/17
5 Page 
STL70N10F3
Package mechanical data
Table 10. PowerFLAT™ 5x6 type S-C mechanical data
Dim.
Min.
mm
Typ.
A 0.80
A1 0.02
A2
b 0.30
0.25
D 5.20
E 6.15
D2 4.11
E2 3.50
e
1.27
e1 0.65
L 0.715
K 1.05
Max.
1.00
0.05
0.50
4.31
3.70
1.015
1.35
Doc ID 018794 Rev 3
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STL70N10F3.PDF ] | |
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