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STL7N10F7 fiches techniques PDF

STMicroelectronics - N-channel Power MOSFET

Numéro de référence STL7N10F7
Description N-channel Power MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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STL7N10F7 fiche technique
STL7N10F7
N-channel 100 V, 0.027 typ., 7 A STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 3.3x3.3
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL7N10F7
VDS
100 V
RDS(on) max
0.035 Ω
ID
7A
N-channel enhancement mode
Lower RDS(on) x area vs previous generation
100% avalanche rated
Applications
Switching applications
Description
th
This device utilizes the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
S(1, 2, 3)
1234
AM15810v1
Order code
STL7N10F7
Table 1. Device summary
Marking
Package
7N10F
PowerFLAT™ 3.3x3.3
Packaging
Tape and reel
April 2014
This is information on a product in full production.
DocID025972 Rev 2
1/14
www.st.com

PagesPages 14
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