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PDF STL86N3LLH6AG Data sheet ( Hoja de datos )
| Número de pieza | STL86N3LLH6AG | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL86N3LLH6AG
Automotive-grade N-channel 30 V, 0.004 Ω typ., 80 A
STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 5x6
Features
Order code
STL86N3LLH6AG
VDS
30 V
RDS(on)
max
0.0052 Ω
ID
80 A
• Designed for automotive application and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• Wettable flank package
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v2
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL86N3LLH6AG
Table 1. Device summary
Marking
Package
86N3LLH6
PowerFLAT™ 5x6
Packaging
Tape and reel
February 2015
This is information on a product in full production.
DocID026950 Rev 3
1/16
www.st.com
1 page  
STL86N3LLH6AG
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 21 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10.5 A,
di/dt = 100 A/µs,
VDD=25 V
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
- 21 A
- 84 A
- 1.1 V
- 24
ns
- 16.8 -
nC
- 1.4 -
A
DocID026950 Rev 3
5/16
16
5 Page 
STL86N3LLH6AG
Package mechanical data
Dim.
A
A1
A2
b
D
E
D2
E2
e
L
L1
K
E3
E4
E5
Table 8. PowerFLAT™ 5x6 WF type R mechanical data
mm
Min.
0.80
0.02
0.30
5.00
6.20
4.11
3.50
0.70
1.275
2.35
0.40
0.08
Typ.
0.25
5.20
6.40
1.27
0.275
Max.
1.00
0.05
0.50
5.40
6.60
4.31
3.70
0.90
1.575
2.55
0.60
0.28
DocID026950 Rev 3
11/16
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