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PDF STL100N8F7 Data sheet ( Hoja de datos )
| Número de pieza | STL100N8F7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL100N8F7
N-channel 80 V, 5.2 mΩ typ., 100 A, STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL100N8F7
VDS
80 V
RDS(on)max
6.1 mΩ
ID
100 A
PTOT
120 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL100N8F7
Table 1: Device summary
Marking
Package
100N8F7
PowerFLAT™ 5x6
Packaging
Tape and reel
December 2015
DocID027058 Rev 3
This is information on a product in full production.
1/14
www.st.com
1 page  
STL100N8F7
Symbol
VSD(1)
trr
Qrr
IRRM
Parameter
Table 7: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0, ISD = 20 A
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times"
- 1.2 V
- 48.6
ns
- 58.6
nC
- 2.4
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027058 Rev 3
5/14
5 Page 
STL100N8F7
Package information
Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)
4.2 PowerFLAT™ 5x6 type C packing information
Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm)
DocID027058 Rev 3
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STL100N8F7.PDF ] | |
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