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Numéro de référence | STL160N3LLH6 | ||
Description | N-channel Power MOSFET | ||
Fabricant | STMicroelectronics | ||
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1 Page
STL160N3LLH6
N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code
STL160N3LLH6
VDSS
30 V
RDS(on)
max
0.0013 Ω
ID
35 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
$$$$
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"OTTOM 6IEW
4OP 6IEW
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Table 1. Device summary
Order code
Marking
STL160N3LLH6
160N3LLH6
Package
PowerFLAT™ 5x6
Packaging
Tape and reel
November 2011
Doc ID 18223 Rev 2
1/16
www.st.com
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Pages | Pages 16 | ||
Télécharger | [ STL160N3LLH6 ] |
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