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PDF STP100N8F6 Data sheet ( Hoja de datos )
| Número de pieza | STP100N8F6 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP100N8F6
N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS
STP100N8F6 80 V
RDS(on)max.
0.009 Ω
ID
100 A
PTOT
176 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STP100N8F6
Table 1: Device summary
Marking
100N8F6
Package
TO-220
Packing
Tube
February 2016
DocID026838 Rev 3
This is information on a product in full production.
1/15
www.st.com
1 page  
STP100N8F6
Symbol
VSD(1)
trr
Qrr
IRRM
Parameter
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
Electrical characteristics
Table 7: Source-drain diode
Test conditions
Min. Typ. Max. Unit
VGS = 0, ISD = 100 A
ISD = 100 A,
di/dt = 100 A/µs
VDD = 64 V (see Figure
15: "Test circuit for
inductive load switching
and diode recovery
times")
-
-
-
-
1.2 V
38 ns
63 nC
3.3 A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID026838 Rev 3
5/15
5 Page 
STP100N8F6
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
Table 8: TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Package information
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID026838 Rev 3
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STP100N8F6.PDF ] | |
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