STP220N6F7 Datasheet PDF - STMicroelectronics
| Part Number | STP220N6F7 | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STP220N6F7
N-channel 60 V, 0.0021 Ω typ., 120 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS
STP220N6F7 60 V
RDS(on)max
0.0024 Ω
ID
120 A
PTOT
237 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STP220N6F7
Table 1: Device summary
Marking
Package
220N6F7
TO-220
Packaging
Tube
October 2015
DocID026547 Rev 3
This is information on a product in full production.
1/13
www.st.com
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STP220N6F7
Symbol
VSD(1)
trr
Qrr
IRRM
Table 7: Source drain diode
Parameter
Test conditions
Electrical characteristics
Min Typ Max Un
. . . it
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0, ISD = 120 A
- - 1.1 V
ISD = 120 A,
- 69
di/dt = 100 A/µs
VDD = 48 V, TJ = 150 °C
- 104
(see Figure 15: "Test circuit
for inductive load switching
-
3
and diode recovery times")
ns
nC
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID026547 Rev 3
5/13
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| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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