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Número de pieza | STP27N60M2-EP | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP27N60M2-EP (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! STP27N60M2-EP,
STW27N60M2-EP
N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP
Power MOSFETs in TO-220 and TO-247 packages
Datasheet - production data
TAB Features
Order code
V DS RDS(on) max
ID
STP27N60M2-EP 600 V
0.163 Ω
20 A
STW27N60M2-EP 600 V
0.163 Ω
20 A
3
2
1
TO-220
3
2
1
TO-247
Extremely low gate charge
Excellent output capacitance (COSS) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Figure 1: Internal schematic diagram
Applications
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Order code
STP27N60M2-EP
STW27N60M2-EP
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and an improved vertical structure, these
devices exhibit low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Marking
Package
Packaging
27N60M2EP
TO-220
TO-247
Tube
December 2015
DocID028723 Rev 1
This is information on a product in full production.
1/16
www.st.com
1 page STP27N60M2-EP, STW27N60M2-EP
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD Source-drain current
- 20 A
ISDM(1)
Source-drain current
(pulsed)
- 80 A
VSD (2) Forward on voltage
VGS = 0 V, ISD = 20 A
- 1.6 V
trr Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
Qrr Reverse recovery charge VDD = 60 V (see Figure 21:
IRRM Reverse recovery current "Switching time waveform")
- 271
- 3.44
- 25.4
ns
µC
A
trr Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
- 352
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C
(see Figure 21: "Switching time
-
4.82
IRRM Reverse recovery current waveform")
- 27.4
ns
µC
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID028723 Rev 1
5/16
5 Page STP27N60M2-EP, STW27N60M2-EP
4.1 TO-220 type A package information
Figure 22: TO-220 type A package outline
Package information
DocID028723 Rev 1
11/16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet STP27N60M2-EP.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP27N60M2-EP | N-channel Power MOSFET | STMicroelectronics |
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