DataSheetWiki


STPSC10TH13TI fiches techniques PDF

STMicroelectronics - Dual 650V power Schottky silicon carbide diode

Numéro de référence STPSC10TH13TI
Description Dual 650V power Schottky silicon carbide diode
Fabricant STMicroelectronics 
Logo STMicroelectronics 





1 Page

No Preview Available !





STPSC10TH13TI fiche technique
STPSC10TH13TI
Dual 650 V power Schottky silicon carbide diode in series



,QVXODWHG72$%

Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Suited for specific bridge-less topologies
High forward surge capability
Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in specific bridge-less
topologies, this dual 650 V rectifier will boost the
performance in hard switching conditions. Its high
forward surge capability ensures a good
robustness during transient phases.
.
Table 1. Device summary (per diode)
Symbol
Value
IF(AV)
VRRM
Tj (max.)
10 A
650 V
175 °C
January 2016
This is information on a product in full production.
DocID024699 Rev 3
1/8
www.st.com
8

PagesPages 8
Télécharger [ STPSC10TH13TI ]


Fiche technique recommandé

No Description détaillée Fabricant
STPSC10TH13TI Dual 650V power Schottky silicon carbide diode STMicroelectronics
STMicroelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche