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STMicroelectronics - power Schottky silicon carbide diode

Numéro de référence STPSC10H065
Description power Schottky silicon carbide diode
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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STPSC10H065 fiche technique
STPSC10H065
650 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Datasheet production data
AK
K
A
K
TO-220AC
STPSC10H065D
K
A
NC
D2PAK
STPSC10H065G-TR
K
A
NC
DPAK
STPSC10H065B-TR
Table 1. Device summary
Symbol
IF(AV)
VRRM
Tj (max)
Value
10 A
650 V
175 °C
October 2012
This is information on a product in full production.
Doc ID 023604 Rev 2
1/9
www.st.com
9

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