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PDF STTH1R04-Y Data sheet ( Hoja de datos )

Número de pieza STTH1R04-Y
Descripción Automotive ultrafast recovery diode
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STTH1R04-Y
Automotive ultrafast recovery diode
A
A
K
SMA
STTH1R04AY
K
SMB
STTH1R04UY
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
VF (typ)
trr (typ)
1A
400 V
175 °C
0.9 V
14 ns
Datasheet - production data
Features
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
AEC-Q101 qualified
ECOPACK®2 compliant component
Description
The STTH1R04-Y series uses ST's new 400 V
planar Pt doping technology. Specially suited for
switching mode base drive and transistor circuits.
Packaged in surface mount packages, this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection for
all automotive application.
July 2013
This is information on a product in full production.
DocID024449 Rev 1
1/10
www.st.com

1 page




STTH1R04-Y pdf
STTH1R04-Y
Characteristics
Figure 11. Forward recovery time versus
dIF/dt (typical values)
tFR(ns)
55
50
45
40
35
30
25
20
15
10
5
0
0 50
IF=1 A
Tj=125 °C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 12. Thermal resistance junction to
ambient versus copper surface under each lead
200 Rth(j-a)(°C/W)
epoxy printed board FR4, copper thickness Cu = 35 µm
SMA
150
100
50
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 13. Thermal resistance junction to ambient versus copper surface under each lead
200 Rth(j-a)(°C/W)
epoxy printed board FR4, copper thickness Cu = 35 µm
SMB
150
100
50
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DocID024449 Rev 1
5/10
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