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PDF STTH1R04 Data sheet ( Hoja de datos )

Número de pieza STTH1R04
Descripción Ultrafast recovery diode
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STTH1R04
Ultrafast recovery diode
Features
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Description
The STTH1R04 series uses ST's new 400 V
planar Pt doping technology. The STTH1R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
AK
DO-41
STTH1R04
DO-15
STTH1R04Q
Band indicates cathode side.
SMA
STTH1R04A
SMB
STTH1R04U
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
VF (typ)
trr (typ)
1A
400 V
175 °C
0.9 V
14 ns
May 2008
Rev 1
1/10
www.st.com

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STTH1R04 pdf
STTH1R04
Characteristics
Figure 11. Relative variations of dynamic
parameters versus junction
temperature
QQRRRR;; IIRRMM [[TTj]j] // QQRRRR;; IIRRMM [[TTj=j=112255°°CC]]
1.4
IF= 1 A
VR=320 V
1.2
1.0
IRM
0.8
0.6 QRR
0.4
0.2
Tj(°C)
0.0
25 50 75 100 125 150
Figure 12. Transient peak forward voltage
versus dIF/dt (typical values)
VFp(V)
30
IF=1 A
Tj=125 °C
25
20
15
10
5
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 13. Forward recovery time versus
dIF/dt (typical values)
tFR(ns)
55
50
45
40
35
30
25
20
15
10
5
0
0 50
IF=1 A
Tj=125 °C
dIF/dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 14. Thermal resistance versus
lead length (DO-41)
Rth(°C/W)
120
100
Rth(j-a)
80
60
Rth(j-l)
40
20
0
5
Lleads(mm)
10 15 20
DO-41
25
Figure 15.
Thermal resistance junction to
ambient versus lead length, DO-15
Figure 16.
Thermal resistance junction to
ambient versus copper surface
under each lead, SMA, SMB, (epoxy
FR4, copper thickness = 35 µm)
Rth(j-a)(°C/W)
120
100
DO-15
Rth(j-a) (°C/W)
120
100
SMA
80 80
SMB
60 60
40 40
20
Lleads(mm)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
20
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5/10

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