STW21N150K5 Datasheet PDF - STMicroelectronics
| Part Number | STW21N150K5 | |
| Description | N-CHANNEL MOSFET | |
| Manufacturers | STMicroelectronics | |
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STW21N150K5
N-channel 1500 V, 0.7 Ω typ.,14 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW21N150K5
VDS
1500 V
RDS(on) max.
0.9 Ω
ID
14 A
PTOT
446 W
Industry’s lowest RDS(on) * area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STW21N150K5
Table 1: Device summary
Marking
21N150K5
Package
TO-247
Packing
Tube
October 2015
DocID026818 Rev 3
This is information on a product in full production.
1/12
www.st.com
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STW21N150K5
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, VGS = 0 V
ISD = 7 A, VDD = 60 V
di/dt = 100 A/µs,
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 7A
- 28 A
- 1.5 V
- 448
ns
- 8.24
µC
- 36.8
A
trr Reverse recovery time
ISD = 7 A,VDD = 60 V
Qrr Reverse recovery charge di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 16: "Test circuit for
IRRM Reverse recovery current inductive load switching and
diode recovery times")
- 564
- 9.48
- 33.6
ns
µC
A
Notes:
(1)Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
IGS = ±1 mA, ID = 0 A
Min. Typ. Max. Unit
30 -
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID026818 Rev 3
5/12
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