|
|
PDF STF21N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STF21N65M5 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STF21N65M5 (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
|
No Preview Available !
STB21N65M5, STF21N65M5
STI21N65M5, STP21N65M5, STW21N65M5
N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET
D²PAK, TO-220FP, TO-220, I²PAK, TO-247
Features
Order codes
VDSS @
TJmax
RDS(on)
max
ID
PW
STB21N65M5
STF21N65M5
17 A 125 W
17 A(1) 30 W
STI21N65M5 710 V < 0.179 Ω
STP21N65M5
17 A 125 W
STW21N65M5
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Application
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
STB21N65M5
STF21N65M5
STI21N65M5
STP21N65M5
STW21N65M5
21N65M5
123
I²PAK
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
May 2011
Doc ID 15427 Rev 4
1/22
www.st.com
22
1 page  
STB/F/I/P/W21N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 11 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
(see Figure 24)
Min. Typ. Max Unit
37 ns
10 ns
--
12 ns
24 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
17 A
68 A
1.5 V
294 ns
4 µC
28 A
340 ns
5 µC
29 A
Doc ID 15427 Rev 4
5/22
5 Page 
STB/F/I/P/W21N65M5
Package mechanical data
Table 8. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
mm
Typ.
16
Figure 25. TO-220FP drawing mechanical data
L7
A
B
Dia
L6
D
L5
F1 F2
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
HG
G1
L2
L3
Doc ID 15427 Rev 4
L4
7012510_Rev_K
11/22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet STF21N65M5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STF21N65M5 | N-CHANNEL MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |