STP21N65M5 Datasheet PDF - STMicroelectronics
| Part Number | STP21N65M5 | |
| Description | N-CHANNEL MOSFET | |
| Manufacturers | STMicroelectronics | |
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STB21N65M5, STF21N65M5
STI21N65M5, STP21N65M5, STW21N65M5
N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET
D²PAK, TO-220FP, TO-220, I²PAK, TO-247
Features
Order codes
VDSS @
TJmax
RDS(on)
max
ID
PW
STB21N65M5
STF21N65M5
17 A 125 W
17 A(1) 30 W
STI21N65M5 710 V < 0.179 Ω
STP21N65M5
17 A 125 W
STW21N65M5
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Application
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
STB21N65M5
STF21N65M5
STI21N65M5
STP21N65M5
STW21N65M5
21N65M5
123
I²PAK
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
May 2011
Doc ID 15427 Rev 4
1/22
www.st.com
22
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STB/F/I/P/W21N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 11 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
(see Figure 24)
Min. Typ. Max Unit
37 ns
10 ns
--
12 ns
24 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
17 A
68 A
1.5 V
294 ns
4 µC
28 A
340 ns
5 µC
29 A
Doc ID 15427 Rev 4
5/22
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STP21N65M5 electronic component. |
| Information | Total 22 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STP21N65M5.PDF Datasheet ] | |
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