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PDF STW48N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STW48N60DM2 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW48N60DM2
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW48N60DM2
VDS
600 V
RDS(on) max.
0.079 Ω
ID
40 A
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW48N60DM2
Table 1: Device summary
Marking
48N60DM2
Package
TO-247
Packing
Tube
October 2015
DocID026927 Rev 2
This is information on a product in full production.
1/12
www.st.com
1 page  
STW48N60DM2
Symbol Parameter
ISD(1)
Source-drain
current
ISDM(2)
Source-drain
current
(pulsed)
VSD(3)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 40 A
- 160 A
VGS = 0 V, ISD = 40 A
ISD = 40 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 15: "Test circuit for inductive
load switching and diode recovery times")
- 1.6 V
- 140
ns
- 0.7
µC
- 10
A
- 256
ISD = 40 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 15: "Test circuit for - 2.5
inductive load switching and diode
recovery times")
- 20
ns
µC
A
Notes:
(1)Limited by maximum junction temperature
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 μA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID026927 Rev 2
5/12
5 Page 
STW48N60DM2
Revision history
5 Revision history
Date
Revisi
on
Table 11: Document revision history
Changes
21-Oct-2014 1 First release.
Document status promoted from preliminary to production data.
Modified: title
Modified: VDS in cover page
Modified: Peak diode recovery voltage slope parameter value and note 2
Modified: Rthj-case value in Table 3: "Thermal data"
29-Oct-2015 2 Modified: the entire values in Table 4: "Avalanche characteristics"
Modified: IDSS, IGSS max values and RDS(on) typical value in Table 5: "Static"
Modified: the entire values in Table 6: "Dynamic", Table 7: "Switching times"
and Table 8: "Source-drain diode"
Added: Table 9: "Gate-source Zener diode"
Added: Section 2.1: "Electrical characteristics (curves)"
Minor text changes
DocID026927 Rev 2
11/12
11 Page | ||
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| PDF Descargar | [ Datasheet STW48N60DM2.PDF ] | |
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